Dr Tom O'Hanlon
Profiles

Dr Tom O'Hanlon

Technical Specialist (Electron Microscopy)

Faculty of Science and Engineering

Technical Specialist for the focused ion beam scanning electron microscope (FIB-SEM) working on the Plymouth Materials Characterisation Network (PMCN).

Qualifications

PhD in Materials Science, University of Cambridge. "Development of Multi-Microscopy Techniques for the Characterisation of Nitride Semiconductors." (2018)

MSci in Natural Sciences (Materials Science), University of Cambridge (2012)

Professional membership

Member of the Royal Microscopy Society

Key publications

O'Hanlon TJ, Massabuau FC-P, Bao A, Kappers MJ & Oliver RA 2021 'Directly correlated microscopy of trench defects in InGaN quantum wells' Ultramicroscopy 113255-113255 , DOI
O'Hanlon TJ, Bao A, Massabuau FC-P, Kappers MJ & Oliver RA 2020 'Cross-shaped markers for the preparation of site-specific transmission electron microscopy lamellae using focused ion beam techniques' Ultramicroscopy 212, 112970-112970 , DOI
O'Hanlon TJ, Zhu T, Massabuau FC-P & Oliver RA 2021 'Dislocations at coalescence boundaries in heteroepitaxial GaN/sapphire studied after the epitaxial layer has completely coalesced' Ultramicroscopy 113258-113258 , DOI
View all publications

Key publications

O'Hanlon TJ, Massabuau FC-P, Bao A, Kappers MJ & Oliver RA 2021 'Directly correlated microscopy of trench defects in InGaN quantum wells' Ultramicroscopy 113255-113255 , DOI
O'Hanlon TJ, Bao A, Massabuau FC-P, Kappers MJ & Oliver RA 2020 'Cross-shaped markers for the preparation of site-specific transmission electron microscopy lamellae using focused ion beam techniques' Ultramicroscopy 212, 112970-112970 , DOI
O'Hanlon TJ, Zhu T, Massabuau FC-P & Oliver RA 2021 'Dislocations at coalescence boundaries in heteroepitaxial GaN/sapphire studied after the epitaxial layer has completely coalesced' Ultramicroscopy 113258-113258 , DOI

Key publications are highlighted

Journals
Articles
O'Hanlon TJ, Massabuau FC-P, Bao A, Kappers MJ & Oliver RA 2021 'Directly correlated microscopy of trench defects in InGaN quantum wells' Ultramicroscopy 113255-113255 , DOI
O'Hanlon TJ, Zhu T, Massabuau FC-P & Oliver RA 2021 'Dislocations at coalescence boundaries in heteroepitaxial GaN/sapphire studied after the epitaxial layer has completely coalesced' Ultramicroscopy 113258-113258 , DOI
O'Hanlon TJ, Bao A, Massabuau FC-P, Kappers MJ & Oliver RA 2020 'Cross-shaped markers for the preparation of site-specific transmission electron microscopy lamellae using focused ion beam techniques' Ultramicroscopy 212, 112970-112970 , DOI
Massabuau FC-P, Rhode SL, Horton MK, O’Hanlon TJ, Kovács A, Zielinski MS, Kappers MJ, Dunin-Borkowski RE, Humphreys CJ & Oliver RA 2017 'Dislocations in AlGaN: Core Structure, Atom Segregation, and Optical Properties' Nano Letters 17, (8) 4846-4852 , DOI
Massabuau FC-P, Chen P, Horton MK, Rhode SL, Ren CX, O'Hanlon TJ, Kovács A, Kappers MJ, Humphreys CJ & Dunin-Borkowski RE 2017 'Carrier localization in the vicinity of dislocations in InGaN' Journal of Applied Physics 121, (1) 013104-013104 , DOI
Springbett H, Griffiths J, Ren C, O'Hanlon T, Barnard J, Sahonta S-L, Zhu T & Oliver R 2015 'Structure and composition of non-polar (11-20) InGaN nanorings grown by modified droplet epitaxy' physica status solidi (b) 253, (5) 840-844 , DOI
Conference Papers
Massabuau F, Rhode S, Horton M, O'Hanlon T, Kovacs A, Zielinski M, Kappers MJ, Dunin-Borkowski R, Humphreys CJ & Oliver RA 2018 'Alloy fluctuations at dislocations in III-nitrides: identification and impact on optical properties' Gallium Nitride Materials and Devices XIII 1-/-0/20182-/-0/2018SPIE , DOI