Dr Tom O'Hanlon
Profiles

Dr Tom O'Hanlon

Technical Specialist (Electron Microscopy)

Faculty of Science and Engineering

Biography

Biography

Tom O’Hanlon is a Technical Specialist in electron microscopy, specialising in focused ion beam scanning electron microscopy (FIB-SEM). With a background in materials science, Tom’s previous research focused on correlative investigations of gallium nitride-based semiconductor materials.

Tom’s role with the EU-funded Plymouth Materials Characterisation Network (and previous work with the Plymouth Materials Characterisation Project) supports the microscopy and analysis needs of businesses across a range of industries in the south-west of England.

Qualifications

PhD in Materials Science, University of Cambridge. "Development of Multi-Microscopy Techniques for the Characterisation of Nitride Semiconductors." (2018)

MSci in Natural Sciences (Materials Science), University of Cambridge (2012)

Professional membership

Member of the Royal Microscopy Society

Key publications

O'Hanlon TJ, Massabuau FC-P, Bao A, Kappers MJ & Oliver RA (2021) 'Directly correlated microscopy of trench defects in InGaN quantum wells' Ultramicroscopy 113255-113255 , DOI
O'Hanlon TJ, Zhu T, Massabuau FC-P & Oliver RA (2021) 'Dislocations at coalescence boundaries in heteroepitaxial GaN/sapphire studied after the epitaxial layer has completely coalesced' Ultramicroscopy 113258-113258 , DOI
O'Hanlon TJ, Bao A, Massabuau FC-P, Kappers MJ & Oliver RA (2020) 'Cross-shaped markers for the preparation of site-specific transmission electron microscopy lamellae using focused ion beam techniques' Ultramicroscopy 212, 112970-112970 , DOI
View all publications
Publications

Publications

Key publications

O'Hanlon TJ, Massabuau FC-P, Bao A, Kappers MJ & Oliver RA (2021) 'Directly correlated microscopy of trench defects in InGaN quantum wells' Ultramicroscopy 113255-113255 , DOI
O'Hanlon TJ, Zhu T, Massabuau FC-P & Oliver RA (2021) 'Dislocations at coalescence boundaries in heteroepitaxial GaN/sapphire studied after the epitaxial layer has completely coalesced' Ultramicroscopy 113258-113258 , DOI
O'Hanlon TJ, Bao A, Massabuau FC-P, Kappers MJ & Oliver RA (2020) 'Cross-shaped markers for the preparation of site-specific transmission electron microscopy lamellae using focused ion beam techniques' Ultramicroscopy 212, 112970-112970 , DOI

Key publications are highlighted

Journals
Articles
O'Hanlon TJ, Massabuau FC-P, Bao A, Kappers MJ & Oliver RA (2021) 'Directly correlated microscopy of trench defects in InGaN quantum wells' Ultramicroscopy 113255-113255 , DOI
O'Hanlon TJ, Zhu T, Massabuau FC-P & Oliver RA (2021) 'Dislocations at coalescence boundaries in heteroepitaxial GaN/sapphire studied after the epitaxial layer has completely coalesced' Ultramicroscopy 113258-113258 , DOI
O'Hanlon TJ, Bao A, Massabuau FC-P, Kappers MJ & Oliver RA (2020) 'Cross-shaped markers for the preparation of site-specific transmission electron microscopy lamellae using focused ion beam techniques' Ultramicroscopy 212, 112970-112970 , DOI
Humphreys CJ, Massabuau FC-P, Rhode SL, Horton MK, O’Hanlon TJ, Kovacs A, Zielinski MS, Kappers MJ, Dunin-Borkowski RE & Oliver RA (2018) 'Atomic Resolution Imaging of Dislocations in AlGaN and the Efficiency of UV LEDs' Microscopy and Microanalysis 24, (S1) 4-5 , DOI
Massabuau FC-P, Rhode SL, Horton MK, O’Hanlon TJ, Kovács A, Zielinski MS, Kappers MJ, Dunin-Borkowski RE, Humphreys CJ & Oliver RA (2017) 'Dislocations in AlGaN: Core Structure, Atom Segregation, and Optical Properties' Nano Letters 17, (8) 4846-4852 , DOI
Massabuau FC-P, Chen P, Horton MK, Rhode SL, Ren CX, O'Hanlon TJ, Kovács A, Kappers MJ, Humphreys CJ & Dunin-Borkowski RE (2017) 'Carrier localization in the vicinity of dislocations in InGaN' Journal of Applied Physics 121, (1) 013104-013104 , DOI
Springbett H, Griffiths J, Ren C, O'Hanlon T, Barnard J, Sahonta S-L, Zhu T & Oliver R (2015) 'Structure and composition of non-polar (11-20) InGaN nanorings grown by modified droplet epitaxy' physica status solidi (b) 253, (5) 840-844 , DOI
Conference Papers
Massabuau F, Rhode S, Horton M, O'Hanlon T, Kovacs A, Zielinski M, Kappers MJ, Dunin-Borkowski R, Humphreys CJ & Oliver RA (2018) 'Alloy fluctuations at dislocations in III-nitrides: identification and impact on optical properties' Gallium Nitride Materials and Devices XIII 1-/-0/20182-/-0/2018SPIE , DOI